Title :
A 26.5 GHz silicon MOSFET 2:1 dynamic frequency divider
Author :
Wetzel, M. ; Shi, L. ; Jenkins, K.A. ; de la Houssaye, P.R. ; Taur, Y. ; Asbeck, P.M. ; Lagnado, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
A bulk silicon divide-by-two dynamic frequency divider with maximum clock speed of 26.5 GHz has been achieved. The dynamic divider operates from 6.5 GHz to 26.5 GHz. The design is based on n-channel MOSFET´s with an effective gate length of 0.1 μm.
Keywords :
CMOS digital integrated circuits; MMIC frequency convertors; elemental semiconductors; field effect MMIC; flip-flops; frequency dividers; high-speed integrated circuits; silicon; 0.1 micron; 6.5 to 26.5 GHz; SCFL; Si; Si MOSFET frequency divider; digital CMOS process; divide-by-two frequency divider; dynamic frequency divider; n-channel MOSFET; source-coupled FET logic; CMOS technology; Circuit synthesis; Clocks; Costs; Frequency conversion; Heterojunction bipolar transistors; MOS devices; MOSFET circuits; Radio frequency; Silicon;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
