Title :
Si/SiGe HBT differential impulse generator for high-speed UWB applications
Author :
Lin, Dongyang ; Trasser, A. ; Schumacher, Hermann
Author_Institution :
Inst. of Electron Devices & Circuits, Univ. of Ulm, Ulm, Germany
Abstract :
A low power, fully-integrated heterojunction bipolar transistor (HBT) differential ultra-wideband (UWB) impulse generator for the 3.110.6 GHz frequency band is presented. The impulse generator is based on a cross-coupled oscillator being rapidly turned on and off by an on-chip generated controlling signal. The generated impulses of sub-nanosecond duration have a potential output repetition rate well into the gigahertz range. The design occupies a chip size of 0.3 mm2 including pads. The total power consumption is only 6 mW at a repetition rate of 100 MHz.
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; low-power electronics; microwave bipolar transistors; microwave oscillators; pulse generators; silicon; ultra wideband technology; HBT differential impulse generator; Si-SiGe; cross-coupled oscillator; frequency 100 MHz; frequency 3.1 GHz to 10.6 GHz; high-speed UWB impulse generator; low power fully-integrated HBT differential ultra-wideband impulse generator; on-chip generated controlling signal; power 6 mW; total power consumption;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.2299
