DocumentCode
1397015
Title
State-switched modelocking of two-segment quantum dot laser via self-electro-optical quantum dot absorber
Author
Breuer, Stefan ; Elsasser, W. ; Hopkinson, Mark
Author_Institution
Inst. of Appl. Phys., Tech. Univ. Darmstadt, Darmstadt, Germany
Volume
46
Issue
2
fYear
2010
Firstpage
161
Lastpage
162
Abstract
A new functionality of a quantum dot self-electro-optical absorber is demonstrated. External resistor tuning of a quantum dot absorber via the quantum-confined Stark effect in a strongly chirped broadband two-section quantum dot laser configuration allows tuning from the modelocked ground state emission at 1270 nm to the excited state emission at 1207 nm with decreasing resistance.
Keywords
III-V semiconductors; SEEDs; excited states; gallium arsenide; ground states; indium compounds; laser mode locking; laser tuning; quantum confined Stark effect; quantum dot lasers; resistors; semiconductor quantum dots; InAs-InGaAs; chirped broadband two-section quantum dot laser; excited state emission; external resistor tuning; ground state emission; quantum-confined Stark effect; resistance; self-electrooptical quantum dot absorber; state-switched modelocking; two-segment quantum dot laser; wavelength 1270 nm;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2010.3360
Filename
5399186
Link To Document