DocumentCode :
1397074
Title :
A hysteresis model for planar Hall effect in thin films
Author :
Chang, Ching-Ray
Author_Institution :
Dept. of Phys., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
36
Issue :
4
fYear :
2000
fDate :
7/1/2000 12:00:00 AM
Firstpage :
1214
Lastpage :
1217
Abstract :
Based on the single-domain theory, a hysteresis model of the magnetoresistance ratio of magnetic thin films has been studied with different current-voltage configurations. The influence of the distribution of easy axes on the magnetoresistance was also studied, and results indicated that the peak value of magnetoresistance does not occur at coercivity. Results also suggested that both the multidomains and nonuniform current reduce the MR ratio
Keywords :
Hall effect; magnetic domains; magnetic hysteresis; magnetic thin films; magnetoresistance; modelling; current-voltage configurations; easy axes distribution; hysteresis model; magnetic thin films; magnetoresistance ratio; multidomains; nonuniform current; planar Hall effect; single-domain theory; Anisotropic magnetoresistance; Coercive force; Giant magnetoresistance; Hall effect; Magnetic field measurement; Magnetic fields; Magnetic films; Magnetic hysteresis; Magnetic materials; Transistors;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.877658
Filename :
877658
Link To Document :
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