DocumentCode :
1398888
Title :
1.2- 
m Semiconductor Disk Laser Frequency Doubled With Periodically Poled Lithium Tantalate Crystal
Author :
Rautiainen, Jussi ; Fedorova, Ksenia A. ; Nikkinen, Jari ; Eger, David ; Korpijärvi, Ville-Markus ; Rafailov, Edik U. ; Okhotnikov, Oleg G.
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland
Volume :
22
Issue :
7
fYear :
2010
fDate :
4/1/2010 12:00:00 AM
Firstpage :
453
Lastpage :
455
Abstract :
In this letter, we demonstrate an optically pumped semiconductor disk laser frequency doubled with a periodically poled lithium tantalate crystal. Crystals with various lengths were tested for intracavity frequency conversion. The semiconductor disk laser exploited GaInNAs-based active region with GaAs-AlAs distributed Bragg mirror to produce emission at 1.2-μm wavelength. The frequency doubled power up to 760 mW at the wavelength of 610 nm was achieved with a 2-mm-long crystal.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium arsenide; gallium compounds; indium compounds; laser beams; lithium compounds; optical frequency conversion; optical materials; optical pumping; quantum well lasers; GaAs-AlAs; GaInNAs; LiTaO3; distributed Bragg mirror; frequency doubled laser; intracavity frequency conversion; optical pumping; periodically poled lithium tantalate crystal; semiconductor disk laser; size 1.2 μm; size 2 mm; wavelength 610 nm; Nonlinear optics; quantum-well (QW) lasers; semiconductor lasers; surface-emitting lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2040989
Filename :
5401102
Link To Document :
