DocumentCode :
1399033
Title :
Soft-error-immune switched-load-resistor memory cell
Author :
Homma, Noriyuki ; Nakamura, Tohru ; Hayashida, Tetsuya ; Matsumoto, Motoaki ; Nakazato, Kazuo ; Onai, Takahiro ; Tamaki, Youichi ; Namba, Mitsuo ; Sagara, Kazuhiko ; Ikeda, Kiyoji
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Volume :
35
Issue :
12
fYear :
1988
fDate :
12/1/1988 12:00:00 AM
Firstpage :
2094
Lastpage :
2100
Abstract :
A soft-error-immune switched-load-resistor memory cell especially suitable for ultrahigh-speed bipolar RAM has been developed. The memory cell is composed of upward sidewall base contact structure (SICOS) transistors and shielded Schottky-barrier diodes (SBDs). Alpha-particle-induced noise charges generated in the p--substrate are completely shielded by n+-buried layers of the transistors and the SBDs. Only the noise charges generated in the transistors or the SBDs active regions are gathered in the collectors of the memory cell. The maximum collected noise charge is reduced to a quarter of that of conventional memory cells using SICOS downward transistors and conventional SBDs. Experiments show that this reduction of the collected noise charge increases soft-error immunity to more than 105 times that of conventional memory cells. This result using hot radiation sources does not directly correspond to the real soft-error rate in the field, but demonstrates the realization of an ultrahigh-speed soft-error-immune memory cell
Keywords :
alpha-particle effects; bipolar integrated circuits; integrated circuit technology; integrated memory circuits; random-access storage; SBDs; SICOS; alpha particle induced noise; shielded Schottky-barrier diodes; shielding; soft-error immunity; soft-error-immune; switched-load-resistor memory cell; ultrahigh-speed bipolar RAM; upward sidewall base contact structure; Active noise reduction; Capacitance; Electrons; Noise generators; Noise reduction; Random access memory; Read-write memory; Schottky diodes; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.8782
Filename :
8782
Link To Document :
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