DocumentCode
1399072
Title
Threshold voltage and subthreshold slope of the volume-inversion MOS transistor
Author
Brini, J. ; Benachir, M. ; Ghibaudo, G. ; Balestra, F.
Author_Institution
Lab. de Physique des Composants a Semicond., Grenoble, France
Volume
138
Issue
1
fYear
1991
fDate
2/1/1991 12:00:00 AM
Firstpage
133
Lastpage
136
Abstract
One dimensional numerical simulations of a silicon on insulator transistor, operated in the volume inversion mode, are presented. It is found that, in the case of thin silicon films, the constant potential approximation holds which allows one to establish analytical expressions for the threshold voltage and subthreshold slope. The very thick film situation is also examined so as to cover the whole range of film thickness
Keywords
MOS integrated circuits; insulated gate field effect transistors; semiconductor device models; 1D numerical simulation; SOI; Si; constant potential approximation; film thickness; semiconductor thin film; subthreshold slope; threshold voltage; very thick film; volume-inversion MOS transistor;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings G
Publisher
iet
ISSN
0956-3768
Type
jour
Filename
87825
Link To Document