Title :
Threshold voltage and subthreshold slope of the volume-inversion MOS transistor
Author :
Brini, J. ; Benachir, M. ; Ghibaudo, G. ; Balestra, F.
Author_Institution :
Lab. de Physique des Composants a Semicond., Grenoble, France
fDate :
2/1/1991 12:00:00 AM
Abstract :
One dimensional numerical simulations of a silicon on insulator transistor, operated in the volume inversion mode, are presented. It is found that, in the case of thin silicon films, the constant potential approximation holds which allows one to establish analytical expressions for the threshold voltage and subthreshold slope. The very thick film situation is also examined so as to cover the whole range of film thickness
Keywords :
MOS integrated circuits; insulated gate field effect transistors; semiconductor device models; 1D numerical simulation; SOI; Si; constant potential approximation; film thickness; semiconductor thin film; subthreshold slope; threshold voltage; very thick film; volume-inversion MOS transistor;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
