GaN MESFETs on (111)Si substrate grown by MOCVD

Author

Egawa, T. ; Nakada, N. ; Ishikawa, H. ; Umeno, M.

Author_Institution

Res. Center for Microstructure Devices, Nagoya Inst. of Technol., Japan

Volume

36

Issue

21

fYear

2000

fDate

10/12/2000 12:00:00 AM

Firstpage

1816

Lastpage

1818

Abstract

A GaN metal-semiconductor field-effect transistor (MESFET) has been grown on (111) Si substrate by metalorganic chemical vapour deposition using Al_0.27Ga_0.73N/AlN intermediate layers. The device showed a maximum extrinsic transconductance 25 mS/mm and a drain-source current 169 mA/nm with a complete pinch-off for the 2.5 μm gate-length. The Al_0.27Ga_0.73N/AlN intermediate layers were effective in obtaining a mirror-like surface morphology and a high-resistive undoped GaN layer beneath a channel layer. The GaN MESFET on Si also exhibited no self-heating effects (drain-source current reduction) under high-power conditions. Which results from the better thermal properties of Si than those of sapphire

Keywords

III-V semiconductors; MOCVD; Schottky gate field effect transistors; gallium compounds; power MESFET; semiconductor device measurement; semiconductor growth; surface topography; wide band gap semiconductors; (111) Si substrate; (111)Si substrate; 2.5 mum; 25 mS/mm; Al_0.27Ga_0.73N-AlN; Al_0.27Ga_0.73N/AlN intermediate layers; GaN; GaN MESFETs; GaN metal-semiconductor field-effect transistor; MOCVD; Si; channel layer; drain-source current; drain-source current reduction; extrinsic transconductance; gate-length; high-power conditions; high-resistive undoped GaN layer; metalorganic chemical vapour deposition; mirror-like surface morphology; pinch-off; thermal properties;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20001282

Filename

878656