Title :
Analytical expressions for the tunnel current at abrupt semiconductor-semiconductor heterojunctions
Author :
Searles, Shawn ; Pulfrey, David L. ; Kleckner, T.C.
Author_Institution :
Intel Corp., Hillsboro, OR, USA
fDate :
11/1/1997 12:00:00 AM
Abstract :
Analytical expressions for the tunnel current in abrupt semiconductor heterojunctions are derived. These expressions, which give results in good agreement with numerical calculations, should prove helpful in the construction of compact models for devices in which tunneling is important
Keywords :
semiconductor heterojunctions; tunnelling; abrupt semiconductor-semiconductor heterojunction; tunnel current; Differential equations; Effective mass; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Schottky barriers; Temperature distribution; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
