Title :
Fabrication of low-threshold InGaAs/GaAs ridge waveguide lasers by using in situ monitored reactive ion etching
Author :
Chao, C.P. ; Hu, S.Y. ; Floyd, P. ; Law, K.-K. ; Corzine, S.W. ; Merz, J.L. ; Gossard, A.C. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
7/1/1991 12:00:00 AM
Abstract :
In situ laser-monitored reactive ion etching is used to control ridge formation with 150-AA accuracy in fabricating double heterostructure InGaAs-GaAs strained layer single-quantum-well ridge waveguide lasers grown by molecular-beam epitaxy. Continuous-wave threshold current as low as 3.6 mA was obtained on devices with cleaved mirrors. High-reflectivity (96-70%) coated devices have the lowest threshold current at 2.1 mA.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; 2.1 mA; 3.6 mA; CW threshold currents; InGaAs-GaAs; cleaved mirrors; double heterostructure; high-reflectivity coatings; in situ monitored; laser-monitored; low-threshold diode laser fabrication; molecular-beam epitaxy; reactive ion etching; ridge formation; ridge waveguide lasers; semiconductors; single-quantum-well; strained layer; Etching; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Monitoring; Optical control; Optical device fabrication; Strain control; Threshold current; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
