On surface recombination velocity and output intensity limit of pulsed semiconductor lasers

Relationships obtained by F. Kappeler et al. (1982) are utilized to assess the effect of facet passivation on the output intensity limit in terms of surface recombination velocity. The results show a trend that the output intensity limit increases in an exponential manner with decreasing recombination velocity once the velocity is reduced by a factor of 2 from that for an unpassivated laser. They also indicate that the output intensity is not likely to be limited by nonradiative recombination at the facet when the recombination velocity is reduced by a factor of 4.<>