Title :
Nonlinear gain suppression in semiconductor lasers due to carrier heating
Author :
Willatzen, M. ; Uskov, A. ; Mørk, J. ; Olesen, H. ; Tromborg, B. ; Jauho, A.-P.
Author_Institution :
TFL Telecommun. Res. Lab., Horsholm, Denmark
fDate :
7/1/1991 12:00:00 AM
Abstract :
A simple model is presented for carrier heating in semiconductor lasers from which the temperature dynamics of the electron and hole distributions can be calculated. Analytical expressions for two new contributions to the nonlinear gain coefficient, in are derived, which reflect carrier heating due to stimulated emission and free carrier absorption. In typical cases, carrier heating and spectral holeburning are found to give comparable contributions to nonlinear gain suppression. The results are in good agreement with recent measurements on InGaAsP laser diodes.<>
Keywords :
laser theory; light absorption; nonlinear optics; optical hole burning; semiconductor junction lasers; stimulated emission; InGaAsP laser diodes; carrier heating; electron distributions; free carrier absorption; hole distributions; nonlinear gain coefficient; nonlinear gain suppression; semiconductor lasers; spectral holeburning; stimulated emission; temperature dynamics; Charge carrier processes; Electromagnetic scattering; Heating; Laser modes; Laser theory; Particle scattering; Semiconductor lasers; Spontaneous emission; Stimulated emission; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE