Title :
Analysis of Relative Intensity Noise Spectra for Uniformly and Chirpily Stacked InAs–InGaAs–GaAs Quantum Dot Lasers
Author :
Lin, Gray ; Tang, Hao-Ling ; Cheng, Hsu-Chieh ; Chen, Hung-Lin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
The dynamic properties of uniformly and chirpily stacked InAs-InGaAs-GaAs quantum dot lasers are analyzed in terms of relative intensity noise spectra. For uniformly stacked quantum dot laser with ground-state lasing emissions of 1.3 μm, the K-factor limited bandwidth is 13 GHz. The extracted differential gain and gain compression factor are 1.7 × 10-15 cm2 and 2 × 10-16 cm3, respectively. For chirpily stacked quantum dot laser with excited-state lasing emissions of 1.2 μm, the K-factor limited bandwidth is 14 GHz. Yet the nonproportional dependence between resonance frequency and square root of incremental current yields differential gain of 4.3 × 10-15 cm2 and huge gain compression factor of 1.4 × 10-14 cm3.
Keywords :
III-V semiconductors; chirp modulation; excited states; gallium arsenide; ground states; indium compounds; laser noise; laser transitions; quantum dot lasers; InAs-InGaAs-GaAs; K-factor limited bandwidth; bandwidth 13 GHz; bandwidth 14 GHz; chirpily stacked quantum dot laser; differential gain; excited-state lasing emissions; gain compression factor; ground-state lasing emissions; quantum dot lasers; relative intensity noise spectra; uniformly stacked quantum dot laser; wavelength 1.2 mum; wavelength 1.3 mum; Bandwidth; Chirp; Laser noise; Lasers; Measurement by laser beam; Modulation; Resonant frequency; Differential gain; gain compression; quantum dot lasers; relative intensity noise (RIN);
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2011.2179974
