Title :
Time-dependent snapback in thin-film SOI MOSFET´s
Author :
Raha, Prasun ; Miller, James W. ; Rosenbaum, Elyse
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
During pulsed stressing of SOI MOSFETs for ESD characterization, the turn-on voltage of the parasitic bipolar transistor was observed to be a function of the stress pulse-width. This observation can be understood in terms of a capacitive charging model. The theory behind this time-dependent snapback is presented in this letter along with the experimental results. Comparisons with bulk-Si devices indicate that this phenomenon is specific to SOI and is a manifestation of the floating body effect.
Keywords :
MOSFET; electrostatic discharge; semiconductor device models; semiconductor device testing; silicon-on-insulator; ESD characterization; capacitive charging model; floating body effect; parasitic bipolar transistor; pulsed stressing; stress pulse-width; thin-film SOI MOSFET; time-dependent snapback; turn-on voltage; Bipolar transistors; Electrostatic discharge; MOSFET circuits; Probes; Protection; Pulse measurements; Space vector pulse width modulation; Stress; Testing; Voltage;
Journal_Title :
Electron Device Letters, IEEE
