Title :
InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)
Author :
Liu, Wen-Chau ; Cheng, Shiou-Ying ; Tsai, Jung-Hui ; Lin, Po-Hung ; Chen, Jing-Yuh ; Wang, Wei-Chou
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (/spl Delta/E/sub v/) at the InGaP/GaAs heterointerface, a high current gain (/spl beta//sub max//spl sime/220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of current-voltage (I-V) characteristics at room temperature.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; minority carriers; negative resistance; resonant tunnelling transistors; semiconductor superlattices; 5-period InGaP/GaAs superlattice; I-V characteristics; InGaP-GaAs; InGaP/GaAs heterointerface; InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor; N-shaped negative-differential-resistance phenomena; forward-active region; high current gain; minority carrier confinement barrier; room temperature; saturation region; valence band discontinuity; Bipolar transistors; Carrier confinement; Conducting materials; Etching; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Resonant tunneling devices; Superlattices; Temperature;
Journal_Title :
Electron Device Letters, IEEE
