A single-poly EEPROM cell in SIMOX technology for high-temperature applications up to 250/spl deg/C

Author

Gogl, D. ; Burbach, G. ; Fiedler, H.-L. ; Verbeck, M. ; Zimmermann, C.

Author_Institution

Fraunhofer Inst. of Microelectron. Circuits & Syst., Duisburg, Germany

Volume

18

Issue

11

fYear

1997

Firstpage

541

Lastpage

543

Abstract

A thin-film SIMOX technology has been used for fabrication of a single-polysilicon EEPROM cell suitable for high-temperature applications. The two transistor cell is composed of a select transistor and a floating gate transistor with 10 nm tunnel oxide. The EEPROM process extension requires only a few steps suitable for embedded memory applications with low cost and turn around time. Endurance and data retention characteristics of the SIMOX EEPROM cell are presented for a temperature of 250/spl deg/C. The problem of temperature induced leakage currents in the select transistor at elevated temperatures is investigated.

Keywords

EPROM; MOSFET; SIMOX; high-temperature techniques; leakage currents; life testing; semiconductor device testing; 10 nm; 250 C; EEPROM process extension; LOCOS process; data retention characteristics; embedded memory applications; endurance characteristics; floating gate transistor; high-temperature applications; select transistor; single-polysilicon EEPROM cell; temperature induced leakage currents; thin-film SIMOX technology; tunnel oxide; two transistor cell; Costs; Current measurement; Digital circuits; EPROM; Fabrication; Leakage current; Nonvolatile memory; Temperature distribution; Thin film circuits; Transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.641439

Filename

641439