Title :
InGaP/GaAs heterojunction bipolar transistor grown on a semi-insulating InGaP buffer layer
Author :
Ahmari, D.A. ; Fresina, M.T. ; Hartmann, Q.J. ; Barlage, D.W. ; Feng, M. ; Stillman, G.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
To improve electrical isolation and simplify the heterojunction bipolar transistor (HBT) fabrication process, a semi-insulating InGaP buffer layer has been employed in an InGaP/GaAs HBT. Data is presented that demonstrates this buffer layer serves as an excellent isolation material. In addition, high-frequency HBT´s have been fabricated and characterized to show that the buffer layer does not degrade device performance.
Keywords :
III-V semiconductors; etching; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; isolation technology; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor growth; vapour phase epitaxial growth; 1.5 V; 110 GHz; 18 mA; 65 GHz; Gummel plot; I-V characteristics; InGaP; InGaP-GaAs; InGaP/GaAs heterojunction bipolar transistor growth; LP-MOCVD; cutoff frequency; electrical isolation; etch isolation height; fabrication process simplification; high-frequency HBT; maximum frequency of oscillation; resistor structures; semi-insulating InGaP buffer layer; Buffer layers; Conductivity; Degradation; Etching; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; MOCVD; Molecular beam epitaxial growth; Temperature;
Journal_Title :
Electron Device Letters, IEEE
