DocumentCode
1400547
Title
Doping-induced bandwidth enhancement in metal-semiconductor-metal photodetectors
Author
Burroughes, J.H. ; Rogers, D.L. ; Arjavalingam, G. ; Pettit, G.D. ; Goorsky, M.S.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Height, NY, USA
Volume
3
Issue
7
fYear
1991
fDate
7/1/1991 12:00:00 AM
Firstpage
657
Lastpage
659
Abstract
A novel technique is demonstrated for enhancing metal-semiconductor-metal photodetector bandwidths without reducing responsivity. The authors have observed bandwidth increases of up to 10 GHz from control to enhanced photodetectors which corresponds to about 70% enhancement. This technique involves modifying the internal electric field structure, by introducing a buried n-type doped layer that is completely depleted, to reduce the relatively long hole transit time.<>
Keywords
infrared detectors; metal-semiconductor-metal structures; photodetectors; semiconductor doping; 0.85 micron; 10 GHz; buried n-type doped layer; doping induced bandwidth enhancement; hole transit time; internal electric field structure; metal-semiconductor-metal photodetectors; responsivity; Bandwidth; Capacitance; Detectors; Gallium arsenide; Indium phosphide; Optical noise; Optical receivers; PIN photodiodes; Photodetectors; RAKE receivers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.87945
Filename
87945
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