Transient Simulation of Microwave SiC MESFETs With Improved Trap Models

Author

Hjelmgren, Hans ; Allerstam, Fredrik ; Andersson, Kristoffer ; Nilsson, Per-Åke ; Rorsman, Niklas

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

57

Issue

3

fYear

2010

fDate

3/1/2010 12:00:00 AM

Firstpage

729

Lastpage

732

Abstract

Measured and simulated transient characteristics of a SiC metal-semiconductor field-effect transistor are compared. Self-heating, gate tunneling, substrate, and surface traps are taken into account in the simulations. By explicitly filling surface traps at the vicinity of the gate during pinchoff, close correspondence between simulated and measured gate lags is achieved.

Keywords

Schottky gate field effect transistors; circuit simulation; electron traps; microwave field effect transistors; silicon compounds; transient analysis; tunnelling; gate lag; gate tunneling; metal-semiconductor field-effect transistor; microwave SiC MESFET; self-heating; substrate; surface trap; transient simulation; trap model; Computational modeling; Design automation; Electron traps; MESFETs; Microwave devices; Microwave technology; Semiconductor process modeling; Silicon carbide; Substrates; Thermal conductivity; Charge carrier processes; MESFET power amplifiers; microwave transistor; silicon carbide; technology computer-aided design (TCAD);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2009.2039679

Filename

5404423