Influence of RTA and LTA on the Optical Propagation Loss in Polycrystalline Silicon Wire Waveguides

Author

Zhu, Shiyang ; Lo, G.Q. ; Ye, J.D. ; Kwong, D.L.

Author_Institution

Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore

Volume

22

Issue

7

fYear

2010

fDate

4/1/2010 12:00:00 AM

Firstpage

480

Lastpage

482

Abstract

To provide flexibility in implementing polySi devices in Si optoelectronic integrated circuits, polySi wire waveguides were fabricated with various low thermal budget solid-phase crystallization (SPC) approaches, i.e., spike rapid thermal annealing (RTA) at 1050??C for < 1 s, low-temperature annealing (LTA) at 600??C for 15 h, or a combination of both with different sequences. The approach of first LTA and then RTA reaches a relatively low optical loss at 1550 nm: ~ 9.8 dB/cm in 300-nm-wide polySi waveguides after an additional forming gas annealing at 420??C to passivate the dangling bonds, close to that fabricated with the conventional high thermal budget SPC.

Keywords

Raman spectra; chemical vapour deposition; crystallisation; elemental semiconductors; integrated optics; integrated optoelectronics; light propagation; optical fabrication; optical losses; optical waveguides; rapid thermal annealing; semiconductor devices; semiconductor thin films; silicon; silicon-on-insulator; Raman spectra; Si; SiO₂; dangling bonds; forming gas annealing; low thermal budget solid-phase crystallization; low-temperature annealing; optical fabrication; optical propagation loss; optoelectronic integrated circuits; passivation; polycrystalline silicon wire waveguides; size 300 nm; spike rapid thermal annealing; temperature 1050 degC; temperature 420 degC; temperature 600 degC; time 15 h; wavelength 1550 nm; Polycrystalline silicon; silicon photonics; solid phase crystallization; waveguides;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2010.2040992

Filename

5404991