DocumentCode
1402188
Title
Longitudinal spatial hole burning in a quantum-dot laser
Author
Asryan, Levon V. ; Suris, Robert A.
Author_Institution
Dept. of Electr. & Comput. Eng., State Univ. of New York, Stony Brook, NY, USA
Volume
36
Issue
10
fYear
2000
Firstpage
1151
Lastpage
1160
Abstract
Detailed theoretical analysis of longitudinal spatial hole burning in quantum-dot (QD) lasers is given. Unlike conventional semiconductor lasers, escape of thermally excited carriers from QDs, rather than diffusion, is shown to control the smoothing-out of the spatially nonuniform population inversion and multimode generation in QD lasers. The multimode generation threshold is calculated as a function of structure parameters (surface density of QDs, QD size dispersion, and cavity length) and temperature. A decrease in the QD size dispersion is shown to increase considerably the relative multimode generation threshold. The maximum tolerable QD size dispersion and the minimum tolerable cavity length, at which lasing is possible to attain, are shown to exist. Concurrent with the increase of threshold current, an increase of the multimode generation threshold is shown to occur with a rise in temperature. Ways to optimize the QD laser, aimed at maximizing the multimode generation threshold, are outlined.
Keywords
laser cavity resonators; laser modes; laser theory; optical hole burning; population inversion; quantum well lasers; semiconductor device models; semiconductor quantum dots; QD size dispersion; cavity length; longitudinal spatial hole burning; minimum tolerable cavity length; multimode generation; multimode generation threshold; quantum-dot laser; smoothing-out; spatially nonuniform population inversion; theoretical analysis; thermally excited carriers; threshold current; Carrier confinement; Laser modes; Laser theory; Optical control; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Temperature; Waveguide lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.880655
Filename
880655
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