Application of radiation-tolerant field oxides and passivation films to the bipolar IC process

Author

Kato, Masataka ; Watanabe, Kikuo ; Okabe, Takeaki

Author_Institution

Hitachi Ltd., Tokyo, Japan

Volume

35

Issue

12

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

2333

Lastpage

2337

Abstract

By applying a double-layer oxide film as a field oxide, the radiation tolerance of n-p-n transistors is improved by one order of magnitude compared with conventional transistors. The buildup of interface states is affected by formation of passivation films, and interface-state buildup using the polymide resin PIQ is suppressed by one-fifth compared with that of inorganic passivation film. Even though irradiation temperature affects the buildup of the interface states, the current gain of an improved n-p-n transistor is sufficient to allow operation at 75°C irradiation

Keywords

bipolar integrated circuits; bipolar transistors; integrated circuit technology; oxidation; passivation; polymer films; radiation hardening (electronics); semiconductor technology; 75 C; PIQ; bipolar IC process; buildup of interface states; current gain; double-layer oxide film; field oxide; interface-state buildup; n-p-n transistors; operation at 75°C irradiation; passivation films; polymide resin; radiation tolerance; radiation-tolerant field oxides; Analog circuits; Application specific integrated circuits; Bipolar integrated circuits; Fabrication; Interface states; Ionizing radiation; Passivation; Polyimides; Resins; Stress;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.8810

Filename

8810