• DocumentCode
    1404
  • Title

    Suppression of Read Disturb Fail Caused by Boosting Hot Carrier Injection Effect for 3-D Stack NAND Flash Memories

  • Author

    Byeong-In Choe ; Jung-Kyu Lee ; Byung-Gook Park ; Jong-Ho Lee

  • Author_Institution
    Interuniv. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea
  • Volume
    35
  • Issue
    1
  • fYear
    2014
  • fDate
    Jan. 2014
  • Firstpage
    42
  • Lastpage
    44
  • Abstract
    A new bias pulse method was proposed to suppress read disturbance in unselected strings of 3-D stack NAND flash memories. Using the proposed read method, we could suppress effectively a large cell Vth shift generated by boosting hot carrier injection. As a result, the cell Vth shift in unselected string is quite similar to normal read disturbance in select string. The proposed read method was verified by both measurement and simulation.
  • Keywords
    NAND circuits; flash memories; hot carriers; three-dimensional integrated circuits; 3-D stack NAND flash memories; bias pulse method; boosting hot carrier injection effect; read disturb fail suppression; Ash; Boosting; Computer architecture; Electric potential; Hot carrier injection; Microprocessors; Stress; 3-D stack NAND flash; NAND flash; hot carrier injection; read disturb;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2288991
  • Filename
    6675824
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1404