Title :
InAs quantum-dot lasers operating near 1.3 μm with high characteristic temperature for continuous-wave operation
Author :
Chen, H. ; Zou, Z. ; Shchekin, O.B. ; Deppe, D.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
9/28/2000 12:00:00 AM
Abstract :
A high characteristic temperature with T0 of 126 K under continuous-wave operation is obtained for an InAs/GaAs quantum dot laser. A triple-stacked active region with an energy separation of 95 meV between the ground and first excited radiative transitions is used to achieve a ground state saturation gain at 300 K of 13 cm-1, and high internal quantum efficiency of 74%
Keywords :
Debye temperature; III-V semiconductors; gallium arsenide; indium compounds; laser beams; quantum well lasers; semiconductor quantum dots; 1.3 mum; 126 K; 300 K; 74 percent; InAs; InAs quantum-dot lasers; InAs-GaAs; InAs/GaAs quantum dot laser; characteristic temperature; continuous-wave operation; energy separation; first excited state; ground state; ground state saturation gain; internal quantum efficiency; radiative transitions; triple-stacked active region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001224
