Influence of the operating temperature on the design and utilization of 94-GHz pulsed silicon IMPATT diodes

Author

Dalle, C. ; Beaussart, S. ; Friscourt, M.R.

Author_Institution

IEMN, CNRS, Villeneuve d´´Ascq, France

Volume

19

Issue

7

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

262

Lastpage

264

Abstract

The RF and thermal behavior of 94-GHz P/sup +/PNN/sup +/ double drift flat doping profile silicon impact ionization avalanche transit time (IMPATT) diodes for high-power pulsed operation is investigated by means of time domain electrical oscillator models. It is demonstrated that these diodes have a limited optimum temperature range of operation, associated to specific matching and bias conditions, to achieve a stable and high power operation. This restriction necessitates a thermal control when the oscillator must operate over a wide ambient temperature range. Highly doped, short active zone length diodes appear to have the best potential for high power performance.

Keywords

IMPATT diodes; IMPATT oscillators; elemental semiconductors; millimetre wave diodes; millimetre wave oscillators; semiconductor device models; silicon; time-domain analysis; 94 GHz; P/sup +/PNN/sup +/ double drift flat doping profile silicon impact ionization avalanche transit time (IMPATT) diodes; RF behavior; Si; bias conditions; high power performance; high-power pulsed operation; highly doped short active zone length diodes; limited optimum temperature range; matching conditions; operating temperature; pulsed silicon IMPATT diodes; thermal behavior; time domain electrical oscillator models; wide ambient temperature range; Doping profiles; Impact ionization; Oscillators; Q factor; RLC circuits; Radio frequency; Semiconductor devices; Semiconductor diodes; Silicon; Temperature distribution;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.701437

Filename

701437