Title :
AlGaAs/GaAs tunnelling diode integrated with nanometre-scale oxides patterned by atomic force microscope
Author :
Okada, Y. ; Amano, S. ; Iuchi, Y. ; Kawabe, M. ; Harris, J.S., Jr.
Author_Institution :
Inst. of Mater. Sci., Tsukuba Univ., Ibaraki, Japan
fDate :
6/11/1998 12:00:00 AM
Abstract :
The authors have fabricated a tunnel diode comprising a two-dimensional electron gas channel formed at an AlGaAs/GaAs heterojunction by molecular beam epitaxy and nanometre-scale oxides locally generated using an atomic force microscope (AFM). The AFM-generated oxide lines have been adopted as integral parts of the device, for the first time serving as effective tunnel barriers for single electron transport
Keywords :
III-V semiconductors; aluminium compounds; atomic force microscopy; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; single electron transistors; tunnel diodes; two-dimensional electron gas; AlGaAs-GaAs; atomic force microscope; molecular beam epitaxy; nanometre-scale oxides; oxide lines; single electron transport; tunnel barriers; tunnelling diode; two-dimensional electron gas channel;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980865
