• DocumentCode
    1405720
  • Title

    Microwave performance of GaxIn1-xP/Ga0.47In0.53As resonant tunnelling diodes

  • Author

    Cohen, G.M. ; Ritter, D.

  • Author_Institution
    Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
  • Volume
    34
  • Issue
    12
  • fYear
    1998
  • fDate
    6/11/1998 12:00:00 AM
  • Firstpage
    1267
  • Lastpage
    1268
  • Abstract
    Room temperature DC and microwave operation of aluminium free GaInP/GaInAs/InP resonant tunnelling diodes is reported. The diodes exhibited peak current densities up to 64 kA/cm2 and useful peak to valley current ratios. On-wafer S-parameters were measured up to 40 GHz to extract the equivalent circuit of the device. Based on the small signal analysis, the diode cutoff frequency was estimated to be 150 GHz
  • Keywords
    III-V semiconductors; S-parameters; equivalent circuits; gallium arsenide; gallium compounds; indium compounds; microwave diodes; resonant tunnelling diodes; 150 GHz; 50 MHz to 40 GHz; GaInP-GaInAs-InP; III-V semiconductors; diode cutoff frequency; equivalent circuit; microwave operation; on-wafer S-parameters; peak current densities; peak to valley current ratios; resonant tunnelling diodes; small signal analysis;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980860
  • Filename
    702417
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1405720