Low chirp observed in directly modulated quantum dot lasers

Author

Saito, Hideaki ; Nishi, Kenichi ; Kamei, Akio ; Sugou, Shigeo

Author_Institution

Optoelectron. & High Frequency Device Labs., NEC Corp., Ibaraki, Japan

Volume

12

Issue

10

fYear

2000

Firstpage

1298

Lastpage

1300

Abstract

We have examined the dynamic properties of high-aspect-ratio InAs-quantum-dot (QD) lasers at room temperature. A novel characteristic of low chirp in the lasing wavelength under 1-GHz current modulation was found in the quantum dot lasers. This is more than one order of magnitude less than the typical chirp (0.2-nm) found in a conventional quantum well laser that we used as a reference. Low chirp was obtained not only in the ground state lasing but in the second level lasing of quantum dots as well.

Keywords

III-V semiconductors; chirp modulation; electro-optical modulation; indium compounds; quantum well lasers; semiconductor quantum dots; 1 GHz; InAs; InAs-quantum-dot lasers; current modulation; directly modulated quantum dot lasers; dynamic properties; ground state lasing; high-aspect-ratio; low chirp; quantum dot lasers; quantum well laser; room temperature; second level lasing; Chirp modulation; Energy states; Gallium arsenide; Laser modes; Optical refraction; Quantum dot lasers; Quantum well lasers; Temperature; US Department of Transportation; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.883809

Filename

883809