DocumentCode :
1406961
Title :
Vacuum-sealed silicon micromachined pressure sensors
Author :
Esashi, Masayoshi ; Sugiyama, Susumu ; Ikeda, Kyoichi ; Wang, Yuelin ; Miyashita, Haruzo
Author_Institution :
Tohoku Univ., Sendai, Japan
Volume :
86
Issue :
8
fYear :
1998
fDate :
8/1/1998 12:00:00 AM
Firstpage :
1627
Lastpage :
1639
Abstract :
Considerable progress in silicon pressure sensors has been made in recent years. This paper discusses three types of vacuum-sealed silicon micromachined pressure sensors that represent the present state of the art in this important area. The devices are a capacitive vacuum sensor, a surface-micromachined microdiaphragm pressure sensor, and a resonant pressure sensor. Vacuum sealing for these devices is accomplished using anodic bonding, films deposited using low-pressure chemical vapor deposition, and thermal out-diffusion of hydrogen, respectively. These sensors emphasize high sensitivity, small size, and excellent stability, respectively. The silicon-diaphragm vacuum sensor uses electrostatic force balancing to achieve a wide pressure measurement range
Keywords :
elemental semiconductors; micromachining; microsensors; pressure sensors; seals (stoppers); silicon; LPCVD film; Si; anodic bonding; capacitive vacuum sensor; electrostatic force balancing; pressure measurement; resonant pressure sensor; surface-micromachined microdiaphragm pressure sensor; thermal hydrogen out-diffusion; vacuum-sealed silicon micromachined pressure sensor; Bonding; Capacitive sensors; Chemical sensors; Chemical vapor deposition; Electrostatics; Force measurement; Hydrogen; Resonance; Silicon; Stability;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/5.704268
Filename :
704268
Link To Document :
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