Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors

Author

Mativenga, Mallory ; Choi, Min Hyuk ; Choi, Jae Won ; Jang, Jin

Author_Institution

Adv. Display Res. Center, Kyung Hee Univ., Seoul, South Korea

Volume

32

Issue

2

fYear

2011

Firstpage

170

Lastpage

172

Abstract

Circuits implemented with high-performance amorphous-indium-gallium-zinc-oxide thin-film transistors (TFTs) are realized on polyimide/polyethylene-terephthalate plastic substrates. The TFTs on plastic exhibit a saturation mobility of 19 cm²/V·s and a gate voltage swing of ~0.14 V/dec. For an input of 20 V, an 11-stage ring oscillator operates at 94.8 kHz with a propagation delay time of 0.48 μs. A shift register, consisting of ten TFTs and one capacitor, operates well with good bias stability. AC driving of pull-down TFTs gives the gate driver an improved lifetime of over ten years.

Keywords

III-V semiconductors; amorphous semiconductors; capacitors; flexible electronics; gallium compounds; indium compounds; oscillators; polymer blends; shift registers; thin film transistors; zinc compounds; 11-stage ring oscillator; TFT; amorphous-indium-gallium-zinc-oxide thin-film transistors; bias stability; capacitor; frequency 94.8 kHz; gate driver; gate voltage swing; polyethylene-terephthalate plastic substrates; polyimide plastic substrates; propagation delay time; saturation mobility; shift register; time 0.48 mus; transparent flexible circuits; voltage 20 V; Amorphous indium–gallium–zinc–oxide (a-IGZO); gate driver; polyethylene terephthalate (PET); ring oscillator; shift register;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2093504

Filename

5671459