Title :
High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape
Author :
Lesecq, M. ; Hoel, V. ; Etangs-Levallois, A. Lecavelier des ; Pichonat, E. ; Douvry, Y. ; De Jaeger, J.C.
Author_Institution :
Inst. d´´Electron., de Microelectron. et de Nanotechnol., Unite Mixte de Rech. Centre Nat. de la Rech. Sci., Villeneuve-d´´Ascq, France
Abstract :
In this letter, for the first time to our knowledge, high dc characteristics of AlGaN/GaN/silicon high-electron-mobility transistors transferred onto a thermally enhanced adhesive flexible tape are reported. Transmission line method (TLM) pattern supported on a flexible tape under 0.5% strain exhibits a high current density of 260 mA/mm. DC measurements performed on a representative gate-TLM device (LG = 2 μm) on a flexible tape are presented. Under 0.16 % strain, the device exhibits a maximum drain current of 300 mA/mm for a gate bias of 0 V and a drain bias of 3 V and withstands VDS = 18 V.
Keywords :
III-V semiconductors; adhesives; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; adhesive flexible tape; current density; drain bias; drain current; gate bias; high electron mobility transistors; transmission line method; voltage 18 V; voltage 3 V; Adhesive flexible tape; GaN; high-electron-mobility transistors (HEMTs); strain;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2091251
