Title :
A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors
Author :
Bovolon, N. ; Baureis, P. ; Müller, J.E. ; Zwicknagl, P. ; Schultheis, R. ; Zanoni, E.
Author_Institution :
Dept. of Electron. Eng., Padova Univ., Italy
fDate :
8/1/1998 12:00:00 AM
Abstract :
A novel electrical method to accurately measure the thermal resistance of heterojunction bipolar transistors (HBT´s) is presented. The key advantage of the method is its simplicity, because it requires only the measurement of the device DC output characteristics at two different temperatures. In this brief, the measurement technique is illustrated, applied to multifinger HBT´s and compared with other methods
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; thermal resistance measurement; AlGaAs-GaAs; AlGaAs/GaAs heterojunction bipolar transistor; electrical method; multifinger HBT; thermal resistance measurement; Electrical resistance measurement; Gallium arsenide; Heterojunction bipolar transistors; Pulse amplifiers; Pulse measurements; Research and development; Temperature dependence; Temperature distribution; Thermal resistance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
