DocumentCode
1407613
Title
A new characterization method for hot-carrier degradation in DMOS transistors
Author
Pieracci, A. ; Riccò, B.
Author_Institution
Dept. of Electron., Bologna Univ., Italy
Volume
45
Issue
8
fYear
1998
fDate
8/1/1998 12:00:00 AM
Firstpage
1855
Lastpage
1858
Abstract
This paper presents an original method based on capacitance measurements, that is able to localize and estimate hot-electron-induced oxide charge in double-diffused MOS (DMOS) transistors. The method is validated by means of two-dimensional (2-D) numerical simulation. Preliminary results obtained with state-of-the-art devices are presented as example of application
Keywords
capacitance measurement; electric charge; hot carriers; power MOSFET; semiconductor device testing; 2D numerical simulation; DMOS transistors; capacitance measurements; characterization method; double-diffused MOS transistors; hot-carrier degradation; hot-electron-induced oxide charge; BiCMOS integrated circuits; Bipolar transistors; Breakdown voltage; Capacitance measurement; Degradation; Electric breakdown; Frequency; Hot carriers; Integrated circuit modeling; MOSFETs;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.704394
Filename
704394
Link To Document