Title :
Electrical characteristics and irradiation sensitivity of IGFETs with rapidly grown ultrathin gate dielectrics
Author :
Wright, P.J. ; Moslehi, M.M. ; Saraswat, Krishna C.
Author_Institution :
Stanford Univ., CA
fDate :
12/1/1988 12:00:00 AM
Abstract :
Results are reported on n-channel insulated-gate field effect transistors (IGFETs) with gate insulators (50-60 Å) formed by rapid thermal processing (RTP) in O2 and NH3 ambients. Two types of gate dielectrics were grown: rapid thermal oxides grown in O2 and nitroxides formed by multicycle processing in NH3 and O2. RTP was also used for annealing AS+-implanted source-drain junctions at 1050°C for 30 s. The transistors were characterized by measuring μeff, VT, subthreshold slope, Qf, Dif, Dbd, and hot-electron immunity. The observed trends are discussed. The results demonstrate excellent device characteristics, including, in particular, increased hot-electron immunity and resistance against high-energy electron irradiation
Keywords :
electron beam effects; hot carriers; incoherent light annealing; insulated gate field effect transistors; oxidation; semiconductor device testing; semiconductor technology; 1050 degC; 30 s; NH3; O2; Si-SiNxOy; Si-SiO2; annealing; high-energy electron irradiation; hot-electron immunity; irradiation sensitivity; n-channel IGFET; nitroxides; rapid thermal oxides; rapid thermal processing; rapidly grown ultrathin gate dielectrics; source-drain junctions; subthreshold slope; Annealing; Circuits; Dielectrics; Electric variables; Electrons; Insulation; Laboratories; Lithography; Rapid thermal processing; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
