Electrical characteristics and irradiation sensitivity of IGFETs with rapidly grown ultrathin gate dielectrics

Author

Wright, P.J. ; Moslehi, M.M. ; Saraswat, Krishna C.

Author_Institution

Stanford Univ., CA

Volume

35

Issue

12

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

2438

Lastpage

2439

Abstract

Results are reported on n-channel insulated-gate field effect transistors (IGFETs) with gate insulators (50-60 Å) formed by rapid thermal processing (RTP) in O₂ and NH₃ ambients. Two types of gate dielectrics were grown: rapid thermal oxides grown in O₂ and nitroxides formed by multicycle processing in NH₃ and O₂. RTP was also used for annealing AS⁺-implanted source-drain junctions at 1050°C for 30 s. The transistors were characterized by measuring μ_eff, V_T, subthreshold slope, Q_f, D_if, D_bd, and hot-electron immunity. The observed trends are discussed. The results demonstrate excellent device characteristics, including, in particular, increased hot-electron immunity and resistance against high-energy electron irradiation

Keywords

electron beam effects; hot carriers; incoherent light annealing; insulated gate field effect transistors; oxidation; semiconductor device testing; semiconductor technology; 1050 degC; 30 s; NH₃; O₂; Si-SiN_xO_y; Si-SiO₂; annealing; high-energy electron irradiation; hot-electron immunity; irradiation sensitivity; n-channel IGFET; nitroxides; rapid thermal oxides; rapid thermal processing; rapidly grown ultrathin gate dielectrics; source-drain junctions; subthreshold slope; Annealing; Circuits; Dielectrics; Electric variables; Electrons; Insulation; Laboratories; Lithography; Rapid thermal processing; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.8853

Filename

8853