• DocumentCode
    1408705
  • Title

    Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors

  • Author

    Ventra, Massimiliano Di ; Pershin, Yuriy V. ; Chua, Leon O.

  • Author_Institution
    Dept. of Phys., Univ. of California San Diego, La Jolla, CA, USA
  • Volume
    97
  • Issue
    10
  • fYear
    2009
  • Firstpage
    1717
  • Lastpage
    1724
  • Abstract
    We extend the notion of memristive systems to capacitive and inductive elements, namely, capacitors and inductors whose properties depend on the state and history of the system. All these elements typically show pinched hysteretic loops in the two constitutive variables that define them: current-voltage for the memristor, charge-voltage for the memcapacitor, and current-flux for the meminductor. We argue that these devices are common at the nanoscale, where the dynamical properties of electrons and ions are likely to depend on the history of the system, at least within certain time scales. These elements and their combination in circuits open up new functionalities in electronics and are likely to find applications in neuromorphic devices to simulate learning, adaptive, and spontaneous behavior.
  • Keywords
    capacitors; inductors; memory architecture; circuit elements; memcapacitors; meminductors; memristive systems; memristors; neuromorphic device; pinched hysteretic loop; Circuit simulation; History; Immune system; Memristors; Nanoscale devices; Nonvolatile memory; Organisms; Physics; Thermal resistance; Transistors; Capacitance; dynamic response; hysteresis; inductance; memory; resistance;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/JPROC.2009.2021077
  • Filename
    5247127