DocumentCode
1408705
Title
Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors
Author
Ventra, Massimiliano Di ; Pershin, Yuriy V. ; Chua, Leon O.
Author_Institution
Dept. of Phys., Univ. of California San Diego, La Jolla, CA, USA
Volume
97
Issue
10
fYear
2009
Firstpage
1717
Lastpage
1724
Abstract
We extend the notion of memristive systems to capacitive and inductive elements, namely, capacitors and inductors whose properties depend on the state and history of the system. All these elements typically show pinched hysteretic loops in the two constitutive variables that define them: current-voltage for the memristor, charge-voltage for the memcapacitor, and current-flux for the meminductor. We argue that these devices are common at the nanoscale, where the dynamical properties of electrons and ions are likely to depend on the history of the system, at least within certain time scales. These elements and their combination in circuits open up new functionalities in electronics and are likely to find applications in neuromorphic devices to simulate learning, adaptive, and spontaneous behavior.
Keywords
capacitors; inductors; memory architecture; circuit elements; memcapacitors; meminductors; memristive systems; memristors; neuromorphic device; pinched hysteretic loop; Circuit simulation; History; Immune system; Memristors; Nanoscale devices; Nonvolatile memory; Organisms; Physics; Thermal resistance; Transistors; Capacitance; dynamic response; hysteresis; inductance; memory; resistance;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/JPROC.2009.2021077
Filename
5247127
Link To Document