Title :
An Ultrafast Adaptively Biased Capacitorless LDO With Dynamic Charging Control
Author :
Ming, Xin ; Li, Qiang ; Zhou, Ze-kun ; Zhang, Bo
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
This brief presents a current-efficient fully integrated low-dropout regulator (LDO) for system-on-a-chip applications. A common-gate error amplifier with high bandwidth and slew rate is proposed to reduce the output voltage spike and the response time of the LDO greatly. In addition, the loop employs a direct dynamic charging technique to enhance load-transient responses by directly detecting voltage variations through a capacitive coupling high-pass filter. The circuit has been implemented in a 0.35-μm standard complementary metal-oxide-semiconductor process and occupies an active chip area of 0.064 mm2. Experimental results show that it can deliver a load current of 100 mA at a dropout voltage of 150 mV. It only consumes a quiescent current of 7 μA at light loads and can recover within 0.15 μs, even under the maximum load current change. Consequently, a faster and more accurate capacitorless LDO can be achieved.
Keywords :
CMOS integrated circuits; high-pass filters; system-on-chip; capacitive coupling high-pass filter; common-gate error amplifier; complementary metal-oxide-semiconductor process; current-efficient fully integrated low-dropout regulator; direct dynamic charging technique; dynamic charging control; load-transient response; system-on-a-chip application; ultrafast adaptively biased capacitorless LDO; Bandwidth; Capacitors; Couplings; Logic gates; System-on-a-chip; Transconductance; Transistors; Capacitive coupling; common gate; high bandwidth; low power; low-dropout regulator (LDO); system-on-a-chip (SoC);
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2011.2177698