Numerical Study of the Effects of Hetero-Interfaces, Polarization Charges, and Step-Graded Interlayers on the Photovoltaic Properties of (0001) Face GaN/InGaN p-i-n Solar Cell

Author

Kuo, Yen-Kuang ; Chang, Jih-Yuan ; Shih, Ya-Hsuan

Author_Institution

Dept. of Phys., Nat. Changhua Univ. of Educ., Changhua, Taiwan

Volume

48

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

367

Lastpage

374

Abstract

The photovoltaic properties of (0001) face GaN/InGaN p-i-n solar cell are studied numerically. The simulation results show that the detrimental effects of hetero-interfaces and polarization charges will seriously degrade the solar cell performance, especially when the indium composition is high. If these effects are not eliminated or diminished, the photovoltaic properties would not be good enough for practical applications even if a high-quality crystal could be obtained. For this purpose, the step-graded interlayers between the GaN-InGaN interfaces are introduced in order to overcome both aforementioned critical effects. The impacts of the thickness and p-type doping concentration of the step-graded interlayers are also investigated in detail.

Keywords

III-V semiconductors; gallium compounds; indium compounds; photovoltaic effects; semiconductor heterojunctions; solar cells; GaN-InGaN; heterointerfaces; high quality crystal; p-i-n solar cell; photovoltaic property; polarization charges; step graded interlayers; Absorption; Doping; Electrostatics; Gallium nitride; Indium; PIN photodiodes; Photovoltaic cells; Nitrogen compounds; photovoltaic cells; polarization;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2011.2181972

Filename

6112707