Title :
An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs
Author :
Goo, Jung-Suk ; Choi, Chang-Hoon ; Danneville, François ; Morifuji, Eiji ; Momose, Hisayo Sasaki ; Yu, Zhiping ; Iwai, Hiroshi ; Lee, Thomas H. ; Dutton, Robert W.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fDate :
12/1/2000 12:00:00 AM
Abstract :
Based on an active transmission line concept and two-dimensional (2-D) device simulations, an accurate and computationally efficient simulation technique for high frequency noise performance of MOSFETs is demonstrated. Using a Langevin stochastic source term model and small-signal equivalent circuit of the MOSFET, three intrinsic noise parameters (γ, δ, and c) for the drain noise and induced gate noise are calculated. Validity and error analysis for the simulation are discussed by comparing the simulation results with theoretical results as well as measured data.
Keywords :
MOSFET; equivalent circuits; semiconductor device models; semiconductor device noise; stochastic processes; Langevin stochastic source term model; active transmission line concept; deep submicron MOSFETs; drain noise; error analysis; high frequency noise performance; high frequency noise simulation; induced gate noise; intrinsic noise parameters; simulation technique; small-signal equivalent circuit; two-dimensional device simulation; Analytical models; Circuit noise; Circuit simulation; Computational modeling; Distributed parameter circuits; Frequency; High performance computing; MOSFETs; Transmission line theory; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
