Title :
Optoelectronic characteristics of a-SiC:H-based pin thin film LEDs having a thin Mo buffer layer in contact with p-type a-Si:H
Author :
Chen, Yen-Ann ; Wu, Yung-Hung ; Tsay, Wen-Chin ; Laih, Li Hong ; Hong, Jyh-Wong ; Chang, Chun-Yen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
7/9/1998 12:00:00 AM
Abstract :
To improve the electroluminescence (EL) properties of the a-SiC:H-based pin thin film light-emitting diodes (TFLEDs) with the promotion of hole injection efficiency. A thin Mo metal film was used as a buffer layer to prevent reactions between the ITO (indium-tin-oxide) electrode and the p+-a-Si:H layer. With the formation of semi-transparent Mo silicide after annealing, a lower EL threshold voltage and a significantly higher brightness for a finished TFLED were achieved. The brightness of the obtained device was 1300 cd/m2 at an injection current density of 600 mA/cm2, and its EL threshold voltage was 14 V
Keywords :
amorphous semiconductors; annealing; hydrogen; light emitting diodes; molybdenum; silicon compounds; 14 V; ITO electrode; ITO-Mo-Si:H; InSnO-Mo-Si:H; Mo metal thin film; SiC:H; a-SiC:H pin thin film LED; annealing; brightness; buffer layer; current density; electroluminescence threshold voltage; hole injection efficiency; optoelectronic characteristics; p-type a-Si:H layer; semi-transparent Mo silicide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980981
