Title :
Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching
Author :
Yoo, In Kyeong ; Kang, Bo Soo ; Ahn, Seung Eon ; Lee, Chang Bum ; Lee, Myoung Jae ; Park, Gyeong-Su ; Li, Xiang-Shu
Author_Institution :
Semicond. Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea
fDate :
3/1/2010 12:00:00 AM
Abstract :
A resistance-switching model in nickel oxide thin film is proposed based on Poisson distribution of electrical switching power. Conductive percolating network in soft breakdown surface may be the source of resistance switching. The main body of network may remain unchanged, but a portion of network is broken and healed repeatedly during switching. Dependence of reset current on electrode area is explained by fractal dimension.
Keywords :
Poisson distribution; electric breakdown; electrical conductivity; electrical resistivity; fractals; nickel compounds; percolation; thin films; NiO; Poisson distribution; conducting paths; conductive percolating network; electrical switching power; electrode area; fractal dimension; nickel oxide thin films; resistance switching; resistance-switching model; soft breakdown surface; Nickel oxide; resistance switching; soft breakdown; switching power;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2010.2041670
