InAs/(Al,Ga)Sb quantum well structures for magnetic sensors

Author

Behet, M. ; Das, J. ; De Boeck, Jo ; Borghs, G.

Author_Institution

IMEC, Leuven, Belgium

Volume

34

Issue

4

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

1300

Lastpage

1302

Abstract

This paper reports on the fabrication and characterization of Hall and magnetoresistive sensors with high sensitivity and good temperature stability, InAs/AlGaSb quantum well structures grown by molecular beam epitaxy (MBE) on semiinsulating GaAs substrates were used as active layers for magnetic field sensing. The excellent transport properties (electron mobilities up to 30,000 cm²Ns at room temperature) resulted in high sensitivity for room temperature operation of magnetoresistors (relative sensitivity of 0.46%/mT) and Hall elements (magnetic sensitivity of 5.5 V/T),

Keywords

Hall effect devices; III-V semiconductors; aluminium compounds; electron mobility; gallium compounds; indium compounds; magnetic field measurement; magnetic sensors; magnetoresistive devices; semiconductor epitaxial layers; semiconductor quantum wells; 293 K; GaAs; Hall sensors; InAs-AlGaSb; electron mobility; magnetoresistive sensors; magnetoresistors; molecular beam epitaxy; quantum well structures; semiinsulating GaAs substrates; Fabrication; Gallium arsenide; Magnetic properties; Magnetic sensors; Magnetoresistance; Molecular beam epitaxial growth; Sensor phenomena and characterization; Stability; Substrates; Temperature sensors;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.706528

Filename

706528