DocumentCode :
1413750
Title :
ESD induced pinned layer reversal in spin-valve GMR heads
Author :
Takahashi, M. ; Maeda, T. ; Inage, K. ; Sakai, M. ; Morita, H. ; Matsuzaki, M.
Author_Institution :
Data Storage Components Bus. Group, TDK Corp., Nagano, Japan
Volume :
34
Issue :
4
fYear :
1998
fDate :
7/1/1998 12:00:00 AM
Firstpage :
1522
Lastpage :
1524
Abstract :
Magnetization direction of the pinned layer in the Spin-Valve giant magnetoresistive (SV) heads has been found to be reversed easily by electrostatic discharge (ESD). Thermal stress and magnetic field from ESD cause this phenomenon. This phenomenon happens only when the bias field direction by ESD current Is opposite to the magnetization of the pinned layer. The energy of magnetization reversal of the pinned layer from ESD is found to be a quarter of the ESD breakdown energy. For SV heads which consist of an AF film with higher blocking temperature, the energy becomes higher
Keywords :
electrostatic discharge; giant magnetoresistance; magnetic heads; magnetisation reversal; magnetoresistive devices; blocking temperature; breakdown energy; electrostatic discharge; giant magnetoresistive heads; magnetization reversal; pinned layer reversal; spin-valve GMR heads; thermal stress; Biological system modeling; Breakdown voltage; Circuit testing; Electric breakdown; Electrical resistance measurement; Electrostatic discharge; Humans; Immune system; Magnetic heads; Magnetization reversal;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.706603
Filename :
706603
Link To Document :
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