Title :
Catastrophic Failure in Highly Scaled Commercial NAND Flash Memories
Author :
Irom, Farokh ; Nguyen, Duc N. ; Bagatin, Marta ; Cellere, Giorgio ; Gerardin, Simone ; Paccagnella, Alessandro
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are reported. Three single event effect (SEE) phenomena were investigated: single effect upsets (SEUs), single effect functional interrupts (SEFIs), and a new high current phenomenon which at high LETs results in catastrophic loss of ability to erase and program the device.
Keywords :
flash memories; NAND flash memories; heavy ion single-event measurements; high current phenomenon; single effect functional interrupts; single effect upsets; single event effect; Circuits; Flash memory; Laboratories; Logic arrays; Logic devices; NASA; Nonvolatile memory; Propulsion; Single event upset; Space technology; Catastrophic; destructive; dielectric gate rupture; micro-dose; nonvolatile memory; single event;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2035315
