Title :
Transferred-substrate InP-based heterostructure barrier varactor diodes on quartz
Author :
Arscott, S. ; David, T. ; Mélique, X. ; Mounaix, P. ; Vanbésien, O. ; Lippens, D.
Author_Institution :
Inst. d´´Electron. et de Microelectron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
fDate :
11/1/2000 12:00:00 AM
Abstract :
InP-based heterostructure barrier varactor (HBV) devices employing air-bridge technology have been fabricated on a quartz host substrate following a transfer-substrate technique. Electrical characterization demonstrates highly symmetrical I(V) and C(V) characteristics due to the preservation of the high quality MBE epitaxial layers during the transfer process. Small signal RF measurements have been performed up to 110 GHz and display a marked reduction in the values of parasitic resistance and capacitance, thus confirming the ability of the devices to operate in the upper-part of the MM-wave spectrum
Keywords :
III-V semiconductors; indium compounds; millimetre wave diodes; molecular beam epitaxial growth; quartz; semiconductor technology; substrates; varactors; 110 GHz; EHF; InP; InP-based varactor diodes; MM-wave operation; air-bridge technology; electrical characterization; heterostructure barrier varactor diodes; high quality MBE epitaxial layers; quartz host substrate; symmetrical C-V characteristics; symmetrical I-V characteristics; transfer-substrate technique; Capacitance measurement; Displays; Electrical resistance measurement; Epitaxial layers; Molecular beam epitaxial growth; Performance evaluation; RF signals; Radio frequency; Substrates; Varactors;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
