Title :
High-sensitivity 40 Gbit/s photoreceiver using GaAs PHEMT distributed amplifiers
Author :
Legros, E. ; Vuye, S. ; Giraudet, L. ; Joly, C.
Author_Institution :
France Telecom, CNET, Marcoussis, France
fDate :
6/25/1998 12:00:00 AM
Abstract :
The authors report a 40 Gbit´s photoreceiver made with a GaAl-InAs-InP 0.78 A/W, a 50 GHz side illumination photodiode and three GaAs PHEMT distributed amplifiers, assembled in a pigtailed module, giving a 37 GHz bandwidth, a 10.4 pA/√Hz average input noise and a 65 dBn transimpedance
Keywords :
HEMT integrated circuits; distributed amplifiers; gallium arsenide; integrated optoelectronics; optical receivers; sensitivity; 37 GHz; 40 Gbit/s; GHz bandwidth; GHz side illumination photodiode; GaAl-InAs-InP; GaAs; GaAs PHEMT distributed amplifiers; Gbit/s photoreceiver; average input noise; dBn transimpedance; high-sensitivity; pigtailed module; transimpedance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980946
