DocumentCode :
1417210
Title :
Leakage Power Contributor Modeling
Author :
Dhanwada, Nagu ; Hathaway, David ; Frenkil, J. ; Davis, William Rhett ; Demircioglu, H.
Author_Institution :
Syst. & Technol. Group, IBM Corp., Essex Junction, VT, USA
Volume :
29
Issue :
2
fYear :
2012
fDate :
4/1/2012 12:00:00 AM
Firstpage :
71
Lastpage :
78
Abstract :
Low-power or power-aware design is one of the greatest challenges facing the semiconductor industry. The fidelity of low power design is dependent on the accuracy of power modeling across a wide range of PVT values. This paper describes an alternative “power contributor”based approach to cell leakage characterization that exploits inherent separability of power consumption for different portions of a cell. An experimental use of this approach is also presented that demonstrates how the effort to characterize leakage power can be greatly reduced with only a marginal impact on accuracy.
Keywords :
integrated circuit design; logic circuits; logic design; low-power electronics; microprocessor chips; PVT value; cell leakage characterization; leakage power contributor modeling; low-power design; power consumption separability; power-aware design; semiconductor industry; Analytical models; Integrated circuit modeling; Leakage current; Logic gates; Mathematical model; Power demand; Semiconductor device modeling; leakage; library characterization; low power design; power; power abstraction; power characterization; power modeling;
fLanguage :
English
Journal_Title :
Design & Test of Computers, IEEE
Publisher :
ieee
ISSN :
0740-7475
Type :
jour
DOI :
10.1109/MDT.2012.2183573
Filename :
6125991
Link To Document :
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