Title :
Analysis of current conduction in short-channel accumulation-mode SOI PMOS devices
Author :
Su, Ker-Wei ; Kuo, James B.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
5/1/1997 12:00:00 AM
Abstract :
This paper reports a compact analytical current conduction model for short-channel accumulation-mode SOI PMOS devices. Based on the study, the current conduction mechanism in a short-channel accumulation-mode SOI PMOS device is different from that in a long-channel one. As verified by the experimental data, the compact analytical model considering channel length modulation and prepinchoff velocity saturation gives an accurate prediction of the drain current characteristics
Keywords :
MOSFET; carrier mobility; current distribution; semiconductor device models; silicon-on-insulator; analytical current conduction model; carrier mobility; channel length modulation; current conduction mechanism; drain current characteristics; prepinchoff velocity saturation; short-channel accumulation-mode SOI PMOS devices; Analytical models; Circuits; Electron mobility; MOS devices; Permittivity; Semiconductor process modeling; Substrates; Thin film devices; Transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
