Title :
A coplanar 38-GHz SiGe MMIC oscillator
Author :
Rheinfelder, C.N. ; Beisswanger, F. ; Gerdes, J. ; Schmuckle, F.J. ; Strohm, K.M. ; Luy, J.F. ; Heinrich, W.
Author_Institution :
Ferdinand Braun Inst. fur Hochstfrequenztech., Berlin, Germany
fDate :
11/1/1996 12:00:00 AM
Abstract :
Design, technology, and first results of a coplanar Si-SiGe HBT oscillator monolithically integrated on high-resistivity silicon are reported. At 38 GHz, an oscillator output power of 2 dBm with a conversion (dc to rf) efficiency of 6% is measured
Keywords :
Ge-Si alloys; MMIC oscillators; bipolar MMIC; heterojunction bipolar transistors; microwave oscillators; semiconductor materials; 38 GHz; 6 percent; DC to RF conversion efficiency; Si-SiGe; coplanar Si-SiGe HBT MMIC oscillator; high-resistivity silicon; monolithic integration; output power; Circuit simulation; Costs; Diodes; Fabrication; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Microwave oscillators; Silicon germanium;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
