DocumentCode
1418152
Title
Planar Nearly Ideal Edge-Termination Technique for GaN Devices
Author
Ozbek, A. Merve ; Baliga, B.Jayant
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Volume
32
Issue
3
fYear
2011
fDate
3/1/2011 12:00:00 AM
Firstpage
300
Lastpage
302
Abstract
In this letter, a simple edge termination is described which can be used to achieve nearly ideal parallel-plane breakdown voltage for GaN devices. This technique involves implanting a neutral species on the edges of devices to form a high-resistive amorphous layer. With this termination, formed by using argon implantation, the breakdown voltage of GaN Schottky barrier diodes was increased from 300 V for unterminated diodes to 1650 V after termination.
Keywords
III-V semiconductors; Schottky barriers; Schottky diodes; electric breakdown; gallium compounds; ion implantation; wide band gap semiconductors; GaN; GaN Schottky barrier diodes; argon implantation; high-resistive amorphous layer; parallel-plane breakdown voltage; planar nearly ideal edge-termination technique; voltage 300 V to 1650 V; Breakdown voltage; GaN; Schottky diode; edge termination;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2095825
Filename
5680581
Link To Document