New Set/Reset Scheme for Excellent Uniformity in Bipolar Resistive Memory

Author

Park, Jubong ; Jo, Minseok ; Jung, Seungjae ; Lee, Joonmyoung ; Lee, Wootae ; Kim, Seonghyun ; Park, Sangsu ; Shin, Jungho ; Hwang, Hyunsang

Author_Institution

Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

Volume

32

Issue

3

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

228

Lastpage

230

Abstract

We proposed a new set/reset operation scheme to improve the switching uniformity of filament-type resistive memory. By controlling the magnitude of the sweep voltage in the pulse-sweep mode at each set and reset operation, similar resistance of a conducting filament in a low-resistance state and a homogeneously dissolved conducting filament in high resistance state were obtained continuously. As compared with a normal operation scheme involving a fixed voltage, our new operation scheme exhibits dramatically improved switching uniformity. By combining the new operation scheme with a gradual reset operation, we successfully achieved a stable multibit operation.

Keywords

bipolar memory circuits; random-access storage; bipolar resistive memory; conducting filament; filament-type resistive memory; low-resistance state; pulse-sweep mode; resistive random- access memory; set-reset scheme; switching uniformity; Pulse magnitude modification; resistive random-access memory (RRAM); uniformity;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2094599

Filename

5680582